Publication

Byline

Location

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 23 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,690, issued on June 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device and manufa... और पढ़ें


US Patent Issued to SAMSUNG ELECTRONICS on June 23 for "Semiconductor device including an internal spacer" (South Korean Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,691, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor device including an interna... और पढ़ें


US Patent Issued to Intel on June 23 for "Vertical diodes in stacked transistor technologies" (Oregon Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,692, issued on June 23, was assigned to Intel Corp. (Santa Clara, Calif.). "Vertical diodes in stacked transistor technologies" was invente... और पढ़ें


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 23 for "Method of manufacturing a semiconductor device having a dumbbell-shaped contact connecting differently recessed source/drain epitaxial layers" (Taiwanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,693, issued on June 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Method of manufacturing a semic... और पढ़ें


US Patent Issued to SAMSUNG ELECTRONICS on June 23 for "Semiconductor device including isolation pattern formed based on insulating layer and method for manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,694, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device including isolation pat... और पढ़ें


US Patent Issued to Applied Materials on June 23 for "Methods of improving PMOS transistor performance" (California Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,695, issued on June 23, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Methods of improving PMOS transistor performance" wa... और पढ़ें


US Patent Issued to Monolithic Power Systems on June 23 for "Semiconductor device with integrated junction field effect transistor and associated manufacturing method" (California Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,696, issued on June 23, was assigned to Monolithic Power Systems Inc. (Kirkland, Wash.). "Semiconductor device with integrated junction fie... और पढ़ें


US Patent Issued to Monolithic Power Systems on June 23 for "Semiconductor device with integrated junction field effect transistor and associated manufacturing method" (California Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,697, issued on June 23, was assigned to Monolithic Power Systems Inc. (Kirkland, Wash.). "Semiconductor device with integrated junction fie... और पढ़ें


US Patent Issued to GlobalFoundries U.S. on June 23 for "Polysilicon resistor aligned between gate structures" (Vermont Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,698, issued on June 23, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.). "Polysilicon resistor aligned between gate structures" was... और पढ़ें


US Patent Issued to Infineon Technologies on June 23 for "RC IGBT and method of producing an RC IGBT" (German Inventor)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,699, issued on June 23, was assigned to Infineon Technologies AG (Neubiberg, Germany). "RC IGBT and method of producing an RC IGBT" was inv... और पढ़ें